AN ESTIMATE OF TRANSPORT IN SURFACE-STATE BANDS

被引:1
作者
GERLACH, E
机构
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1987年 / 143卷 / 01期
关键词
D O I
10.1002/pssb.2221430142
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
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页码:K19 / K24
页数:6
相关论文
共 11 条
[1]   SURFACE STATES ON CLEAVED (111) SILICON SURFACES [J].
ASPNES, DE ;
HANDLER, P .
SURFACE SCIENCE, 1966, 4 (04) :353-&
[2]   ELECTRON-PHONON COUPLING AND SURFACE-STATE POLARONS ON SI(111)2X1 [J].
CHEN, CD ;
SELLONI, A ;
TOSATTI, E .
PHYSICAL REVIEW B, 1984, 30 (12) :7067-7091
[3]   DETERMINATION OF SURFACE-STATES ON SI(111) BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY [J].
CLABES, J ;
HENZLER, M .
PHYSICAL REVIEW B, 1980, 21 (02) :625-631
[4]   CARRIER SCATTERING AND TRANSPORT IN SEMICONDUCTORS TREATED BY THE ENERGY-LOSS METHOD [J].
GERLACH, E .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (24) :4585-4603
[5]  
GERLACH E, 1977, FESTKORPERPROBLEME, V17, P157
[6]  
GOLD A, 1984, THESIS TU MUNICH
[7]  
HENZLER M, 1975, SURFACE PHYSICS MAT, V1, P241
[8]  
JONSON M, 1976, J PHYS C SOLID STATE, V9, P3059
[9]   CORRELATION OF GEOMETRICAL STRUCTURE AND ELECTRONIC PROPERTIES AT CLEAN SEMICONDUCTOR SURFACES [J].
MONCH, W .
SURFACE SCIENCE, 1977, 63 (01) :79-95
[10]   INELASTIC-SCATTERING OF SLOW-ELECTRONS FROM SI(111) SURFACES [J].
PERSSON, BNJ ;
DEMUTH, JE .
PHYSICAL REVIEW B, 1984, 30 (10) :5968-5986