STABILITY OF THE (INAS)1/(GAAS)1 MONOLAYER SUPERLATTICE

[31] CALCULATION OF SCHOTTKY-BARRIER HEIGHTS FROM SEMICONDUCTOR BAND STRUCTURES [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 275 - 284

[32] WEAST RC, 1985, HDB CHEM PHYSICS

[33] On the interaction of electrons in metals [J]. PHYSICAL REVIEW, 1934, 46 (11): : 1002 - 1011

[34] STABILITY AND ELECTRONIC-STRUCTURE OF ULTRATHIN [001] (GAAS)M(ALAS)M SUPERLATTICES [J]. PHYSICAL REVIEW B, 1988, 37 (03): : 1342 - 1363

[35] THERMODYNAMIC INSTABILITY OF ULTRATHIN SEMICONDUCTOR SUPERLATTICES - THE (001) (GAAS)1(ALAS)1 STRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (11) : 1123 - 1126

[36] A NEW HIGH-ELECTRON MOBILITY MONOLAYER SUPERLATTICE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11): : L680 - L682

[31] CALCULATION OF SCHOTTKY-BARRIER HEIGHTS FROM SEMICONDUCTOR BAND STRUCTURES [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 275 - 284

[32] WEAST RC, 1985, HDB CHEM PHYSICS

[33] On the interaction of electrons in metals [J]. PHYSICAL REVIEW, 1934, 46 (11): : 1002 - 1011

[34] STABILITY AND ELECTRONIC-STRUCTURE OF ULTRATHIN [001] (GAAS)M(ALAS)M SUPERLATTICES [J]. PHYSICAL REVIEW B, 1988, 37 (03): : 1342 - 1363

[35] THERMODYNAMIC INSTABILITY OF ULTRATHIN SEMICONDUCTOR SUPERLATTICES - THE (001) (GAAS)1(ALAS)1 STRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (11) : 1123 - 1126

[36] A NEW HIGH-ELECTRON MOBILITY MONOLAYER SUPERLATTICE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11): : L680 - L682