RBS INVESTIGATIONS OF BUFFER LAYERS BETWEEN YBA2CU3O7-X AND SILICON

被引：11

作者：

LUBIG, A ^{[1
]}

BUCHAL, C ^{[1
]}

FROHLINGSDORF, J ^{[1
]}

ZANDER, W ^{[1
]}

STRITZKER, B ^{[1
]}

机构：

[1] VDI TECHNOL ZENTRUM,W-4000 DUSSELDORF 1,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 50卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(90)90341-Q

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The deposition of high-quality high-Tc superconducting films on silicon wafers for future hybrid electronic devices is strongly hampered by the interdiffusion between films and substrate. This effect degrades the superconducting properties seriously and is a strong function of temperature. Since high processing temperatures are inevitable for good films, suitable buffer layers are needed to reduce the interdiffusion. We have investigated the combinations ZrO2/Si(100), BaF2/Si(100), and noble-metal/TiN/Si(100) at temperatures up to 780°C in oxidizing ambient. YBa2Cu3O7-x films have been deposited onto the buffer layers by laser ablation. Thereafter the interfaces have been analyzed by Rutherford backscattering. So far only ZrO2 has demonstrated sufficient stability to serve as a buffer layer for the laser-ablated YBa2Cu3O7-x films. All other combinations suffer from interdiffusion or oxidation. © 1990.

引用

页码：114 / 118

页数：5

共 23 条

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