GROWTH OF LATTICE-MISMATCHED STACKED EPITAXIAL CAF2-SRF2-BAF2 LAYERS ON (100) ORIENTED SI SUBSTRATES

被引：28

作者：

BLUNIER, S

ZOGG, H

WEIBEL, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 16期

关键词：

D O I：

10.1063/1.100432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1512 / 1514

页数：3

共 14 条

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[2]

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[3] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING [J].

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[4] CONTROL OF CRYSTAL ORIENTATIONS IN LATTICE-MISMATCHED SRF2 AND (CA, SR)F2 FILMS ON SI SUBSTRATES BY INTERMEDIATE CAF2 FILMS [J].

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[5]

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APPLIED PHYSICS LETTERS, 1985, 46 (10) :947-949

[7] EPITAXIAL-GROWTH AND CHARACTERIZATION OF CAF2 ON SI [J].

SCHOWALTER, LJ ;

FATHAUER, RW ;

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[8]

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[9] STRAIN RELIEF IN EPITAXIAL FLUORIDE BUFFER LAYERS FOR SEMICONDUCTOR HETEROEPITAXY [J].

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APPLIED PHYSICS LETTERS, 1986, 49 (15) :933-935

[10] GROWTH OF HIGH-QUALITY EPITAXIAL PBSE ONTO SI USING A (CA,BA)F2 BUFFER LAYER [J].

ZOGG, H ;

HUPPI, M .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :133-135

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