GROWTH OF HIGH-QUALITY EPITAXIAL PBSE ONTO SI USING A (CA,BA)F2 BUFFER LAYER

被引：71

作者：

ZOGG, H

HUPPI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 02期

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D O I：

10.1063/1.96239

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：133 / 135

页数：3

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