OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER TRANSPORT IN GAAS ALXGA1-XAS AND IN0.53GA0.47AS IN0.52AL0.48AS MULTIQUANTUM WELLS

被引:8
作者
GUPTA, S [1 ]
DAVIS, L [1 ]
BHATTACHARYA, PK [1 ]
机构
[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ULTRAFAST SCI LAB,ANN ARBOR,MI 48109
关键词
D O I
10.1063/1.107269
中图分类号
O59 [应用物理学];
学科分类号
摘要
An all-optical time-of-flight technique is used for measuring perpendicular carrier transport in semiconductor heterostructures and multiquantum wells (MQWs). This technique is based on measuring a change in surface reflectance due to the absorption nonlinearities induced by the carriers, and has a temporal resolution of approximately 1 ps. Typical results on a GaAs/AlxGa1-xAs MQW and an In0.53Ga0.47As/In0.52Al0.48As MQW are compared. The observed fast transport times can only be explained by a field-dependent carrier emission out of the quantum well, after which transport through the continuum states can occur. Due to larger barriers in the In0.53Ga0.47As/In0.52Al0.48As system, this intrinsic limit to transport is much larger, and hence these devices are observed to be slower than their GaAs/AlxGa1-xAs counterparts.
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页码:1456 / 1458
页数:3
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