SOFT ERROR RATE ANALYSIS MODEL (SERAM) FOR DYNAMIC NMOS RAMS

被引：3

作者：

AOKI, M ^{[1
]}

TOYABE, T ^{[1
]}

SHINODA, T ^{[1
]}

MASUHARA, T ^{[1
]}

ASAI, S ^{[1
]}

KAWAMOTO, H ^{[1
]}

MITSUSADA, K ^{[1
]}

机构：

[1] HITACHI LTD, CTR DEVICE DEV, KODAIRA, TOKYO 187, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1982年 / 21卷 / 01期

关键词：

D O I：

10.7567/JJAPS.21S1.73

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：73 / 78

页数：6

共 10 条

[1] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

YU, HN ;

RIDEOUT, VL ;

BASSOUS, E ;

LEBLANC, AR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268

[2]

KATTO H, 1980, ELECTRONICS, V53, P103

[3] MODELING DIFFUSION AND COLLECTION OF CHARGE FROM IONIZING-RADIATION IN SILICON DEVICES [J].

KIRKPATRICK, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1742-1753

[4] ALPHA-PARTICLE-INDUCED SOFT ERRORS IN DYNAMIC MEMORIES [J].

MAY, TC ;

WOODS, MH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (01) :2-9

[5]

MAY TC, 1980 DIG PAP TEST C

[6]

MAY TC, 1979, 29TH P EL COMP C CHE, P247

[7]

MITSUSADA K, 1980, T IECE C, V63, P61

[8]

Motoki N., 1980, Proceedings of ISTFA 1980 International Symposium for Testing and Failure Analysis, P30

[9] MONTE-CARLO MODELING OF THE TRANSPORT OF IONIZING-RADIATION CREATED CARRIERS IN INTEGRATED-CIRCUITS [J].

SAIHALASZ, GA ;

WORDEMAN, MR .

ELECTRON DEVICE LETTERS, 1980, 1 (10) :211-213

[10] ALPHA-PARTICLE TRACKS IN SILICON AND THEIR EFFECT ON DYNAMIC MOS RAM RELIABILITY [J].

YANEY, DS ;

NELSON, JT ;

VANSKIKE, LL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (01) :10-16

← 1 →