OXIDE MICRO-PRECIPITATES IN AS-GROWN CZ SILICON

[1] BURKE J, 1965, KINETICS PHASE TRANS, pCH6

[2] CAZCARRA V, 1979, I PHYS C SER, V46, pCH3

[3] DAIDO K, 1979, REV ELEC COMMUN LAB, V27, P33

[4] DEKOCK AJR, 1979, MAY EL SOC M BOST

[5] PRECIPITATION OF OXYGEN IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (01) : 31 - 33

[6] HOSHIKAWA K, 1980, JPN J APPL PHYS, V19, pL133

[7] HROSTOWSKI HJ, 1957, PHYS REV, V107, P882

[8] INOUE N, 1979, OCT EL SOC M LOS ANG

[9] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[10] MOERSCHEL KG, 1977, SEMICONDUCTOR SILICO, P170

[1] BURKE J, 1965, KINETICS PHASE TRANS, pCH6

[2] CAZCARRA V, 1979, I PHYS C SER, V46, pCH3

[3] DAIDO K, 1979, REV ELEC COMMUN LAB, V27, P33

[4] DEKOCK AJR, 1979, MAY EL SOC M BOST

[5] PRECIPITATION OF OXYGEN IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (01) : 31 - 33

[6] HOSHIKAWA K, 1980, JPN J APPL PHYS, V19, pL133

[7] HROSTOWSKI HJ, 1957, PHYS REV, V107, P882

[8] INOUE N, 1979, OCT EL SOC M LOS ANG

[9] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[10] MOERSCHEL KG, 1977, SEMICONDUCTOR SILICO, P170