PREFERENTIAL DIFFUSION AND ORIENTATION EFFECTS OF SCHOTTKY-BARRIER GAAS FIELD-EFFECT TRANSISTORS

被引：6

作者：

MCLAUGHLIN, KL

BIRRITTELLA, MS

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 02期

关键词：

D O I：

10.1063/1.94688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：252 / 254

页数：3

共 11 条

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[9] PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS [J].

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[10] GAAS LSI-DIRECTED MESFETS WITH SELF-ALIGNED IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) [J].

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