NEW HIGH GAUGE-FACTOR THICK-FILM TRANSDUCER BASED ON A CAPACITOR CONFIGURATION

被引：11

作者：

ARSHAK, KI

COLLINS, D

ANSARI, F

机构：

[1] E.C.E. Department, University of Limerick, Plassey Technological Park, Limerick

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1994年 / 77卷 / 03期

关键词：

D O I：

10.1080/00207219408926071

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A highly sensitive thick-film sensor developed by using a novel thick-film resistor composition, coupled with design and layout techniques, is reported. The thick film paste is based on the combination of oxides of bismuth, indium and ruthenium. By varying the layout and composition of the thick-film sensors, high gauge-factor values usually attributed to silicon semiconductor strain gauges have been achieved. Various strain gauge parameters have been analysed including linearity, hysteresis and temperature effects. Gauge factor values between 75 to 85 in both resistive and capacitive gauge applications have been observed.

引用

页码：387 / 399

页数：13

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