MAGNETORESISTANCE OF P-TYPE SI IN HOPPING REGION

被引:8
作者
POLLAK, M
WATT, DH
机构
来源
PHYSICAL REVIEW | 1963年 / 129卷 / 04期
关键词
D O I
10.1103/PhysRev.129.1508
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1508 / &
相关论文
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[2]   LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON [J].
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[3]  
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[5]   GALVANOMAGNETIC EFFECTS IN N-GE IN IMPURITY CONDUCTION RANGE [J].
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