TRANSIT-TIME CONSIDERATIONS IN P-I-N DIODES

[1] ANDERSON LK, 1963, P IEEE, V51, P846

[2] EARLY SM, 1954, BELL SYSTEM TECH J, V33, P517

[3] GARTNER WW, 1959, PHYS REV, V116, P94

[4] COHERENT LIGHT DETECTION IN SOLID-STATE PHOTODIODES [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (01) : 166 - &

[5] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 175 - 180

[6] THEORY OF THE SWEPT INTRINSIC STRUCTURE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (06): : 1239 - 1284

[7] RITTNER ES, 1956, PHOTOCONDUCTIVITY C, P215

[8] RYDER EJ, 1954, PHYS REV, V90, P776

[9] NARROW BASE GERMANIUM PHOTODIODES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1122 - 1130

[1] ANDERSON LK, 1963, P IEEE, V51, P846

[2] EARLY SM, 1954, BELL SYSTEM TECH J, V33, P517

[3] GARTNER WW, 1959, PHYS REV, V116, P94

[4] COHERENT LIGHT DETECTION IN SOLID-STATE PHOTODIODES [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (01) : 166 - &

[5] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 175 - 180

[6] THEORY OF THE SWEPT INTRINSIC STRUCTURE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (06): : 1239 - 1284

[7] RITTNER ES, 1956, PHOTOCONDUCTIVITY C, P215

[8] RYDER EJ, 1954, PHYS REV, V90, P776

[9] NARROW BASE GERMANIUM PHOTODIODES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1122 - 1130