HYDROGENATED AMORPHOUS-SILICON STUDIED BY SCANNING TUNNELING MICROSCOPY

被引：23

作者：

WIESENDANGER, R ^{[1
]}

ROSENTHALER, L ^{[1
]}

HIDBER, HR ^{[1
]}

GUNTHERODT, HJ ^{[1
]}

MCKINNON, AW ^{[1
]}

SPEAR, WE ^{[1
]}

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.340148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4515 / 4517

页数：3

共 14 条

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BINNIG, G ;

ROHRER, H .

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[2] SURFACE-MORPHOLOGY OF OXIDIZED AND ION-ETCHED SILICON BY SCANNING TUNNELING MICROSCOPY [J].

FEENSTRA, RM ;

OEHRLEIN, GS .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :97-99

[3] VOLTAGE DROP IN THE EXPERIMENTS OF SCANNING TUNNELING MICROSCOPY FOR SI [J].

FLORES, F ;

GARCIA, N .

PHYSICAL REVIEW B, 1984, 30 (04) :2289-2291

[4] SCANNING TUNNELING MICROSCOPY OF NANOCRYSTALLINE SILICON SURFACES [J].

GIMZEWSKI, JK ;

HUMBERT, A ;

POHL, DW ;

VEPREK, S .

SURFACE SCIENCE, 1986, 168 (1-3) :795-800

[5]

JOANNOPOULOS JD, 1984, TOPICS APPLIED PHYSI, V55

[6]

JOANNOPOULOS JD, 1984, TOPICS APPLIED PHYSI, V56

[7]

PANKOVE JI, 1984, HYDROGENATED AMORP C, V21

[8]

PANKOVE JI, 1984, HYDROGENATED AMORP A, V21

[9]

PANKOVE JI, 1984, HYDROGENATED AMORP D, V21

[10]

PANKOVE JI, 1984, HYDROGENATED AMORP B, V21

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