DIRECT-GAP GE/GESN/SI AND GESN/GE/SI HETEROSTRUCTURES

被引：128

作者：

SOREF, RA

FRIEDMAN, L

机构：

[1] Rome Laboratory, RL/EROC Hanscom Air Force Base

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1993年 / 14卷 / 2-3期

关键词：

D O I：

10.1006/spmi.1993.1122

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A theoretical proposal is given for creating direct-gap semiconductor layers in silicon-based Group IV heterostructures. Based upon recent bandstructure calculations for pseudomorphic Ge/GeSi and GeSi/Ge, we predict a strain-induced GAMMA(c)-L(c) direct-gap crossover (lambda(g) approximately 2.2 mum) in tensile Ge/Ge0.87Sn0.13 and in compressive Ge0.98Sn0.02/Ge. We used linear extrapolation of band-edge curves. The direct-gap structures are potentially useful in laser diodes, electrooptic modulators, and photodetectors.

引用

页码：189 / 193

页数：5

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