COMPOUND-SOURCE MOLECULAR-BEAM EPITAXY FOR ZUCDSE/ZNSSE/ZNMGSSE LASER STRUCTURE

被引：13

作者：

OHKAWA, K

YOSHII, S

TAKEISHI, H

TSUJIMURA, A

HAYASHI, S

KARASAWA, T

MITSUYU, T

机构：

[1] Central Research Laboratories, Matsushita Electric, Hikaridai, Seikacho, Kyoto

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 12A期

关键词：

SEMICONDUCTOR LASER; II-VI COMPOUNDS; ZNMGSSE; MBE; COMPOUND SOURCE;

D O I：

10.1143/JJAP.33.L1673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed compound-source molecular beam epitaxy (CSMBE) for ZnSe-based laser diodes. The CSMBE technique employs compound sources instead of elemental sources, and can reduces the number of growth parameters. Continuous-wave operation at room temperature of ZnCdSe/ZnSSe/ZnMgSSe laser diodes grown by CSMBE has been demonstrated. The threshold current was 68 mA for a gain-guided device 5 mu m wide and 750 mu m long.

引用

收藏

页码：L1673 / L1675

页数：3

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