PROTON-INDUCED CHARACTERISTIC X-RAY ANALYSIS OF NA AND CL IMPURITY ATOMS IN SIO2 THIN-FILMS

被引：6

作者：

BEEZHOLD, W ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

关键词：

D O I：

10.1063/1.1655045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：540 / 542

页数：3

共 10 条

BEEZHOLD, W ;

EERNISSE, EP .

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[3]

BEEZHOLD W, 1973, SEMICONDUCTOR SILICO

[4]

BURGHARD R, PRIVATE COMMUNICATIO

[5]

DONOVAN RP, 1972, J APPL PHYS, V43, P3897

[6]

EERNISSE EP, 1974, P C SURFACE EFFECTS

[7] NEUTRALIZATION OF NA+ IONS IN HCL-GROWN SIO2 [J].

KRIEGLER, RJ .

[8]

MCCAUGHAN DV, 1972, 1972 P IEEE ANN C NU

[9]

SARIS F, 1973, ION IMPLANTATION SEM

[10] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J].

SNOW, EH ;

GROVE, AS ;

DEAL, BE ;

SAH, CT .