INFLUENCE OF OXYGEN PARTIAL-PRESSURE ON THE PHYSICAL BEHAVIOR OF CDO FILMS PREPARED BY ACTIVATED REACTIVE EVAPORATION

被引：39

作者：

SRAVANI, C

REDDY, KTR

REDDY, PJ

机构：

[1] Department of Physics, Sri Venkateswara University, Tirupati

来源：

MATERIALS LETTERS | 1993年 / 15卷 / 5-6期

关键词：

D O I：

10.1016/0167-577X(93)90095-F

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cadmium oxide thin films were prepared by evaporating cadmium in the presence of oxygen. The effects of varying the oxygen partial pressure on the physical properties were investigated. The films showed a cubic structure with (111) preferred orientation. All the films exhibited the n-type conductivity in the range of oxygen partial pressure used. The films evaporated under the optimum oxygen partial pressure of 1 X 10(-3) Torr exhibited a resistivity of 5.6 x 10(-3) OMEGA cm and a transmittance of about 90% in the visible region.

引用

页码：356 / 358

页数：3

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