LARGE ELECTRONIC-DENSITY INCREASE ON COOLING A LAYERED METAL - DOPED BI2TE3

被引：97

作者：

THOMAS, GA

RAPKINE, DH

VANDOVER, RB

MATTHEISS, LF

SUNDER, WA

SCHNEEMEYER, LF

WASZCZAK, JV

机构：

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.46.1553

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have carried out optical and transport measurements of the free carriers and optical measurements of states above the semiconducting energy gap in the layered crystal Bi2Te3. We find that cooling causes a substantial amount of spectral weight to condense from the above-gap states into the metallic states.

引用

页码：1553 / 1556

页数：4

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