A SEGMENTED ELECTRODE MULTI-QUANTUM-WELL LASER DIODE

被引：10

作者：

IWAMURA, H

TARUCHA, S

SAKU, T

HORIKOSHI, Y

OKAMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 11期

关键词：

D O I：

10.1143/JJAP.22.L751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L751 / L753

页数：3

共 12 条

[1]

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[3] PHOTO-LUMINESCENCE OF AN ALAS-GAAS SUPER-LATTICE GROWN BY MBE IN THE 0.7-0.8-MU-M WAVELENGTH REGION [J].

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[4]

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[5] DYNAMIC BEHAVIOR OF A GAAS-ALGAAS MQW LASER DIODE [J].

IWAMURA, H ;

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ISHIBASHI, T ;

OTSUKA, K ;

HORIKOSHI, Y .

ELECTRONICS LETTERS, 1983, 19 (05) :180-181

[6] SPECTRUM STUDIES ON A GAAS-ALGAAS MULTI-QUANTUM-WELL LASER DIODE GROWN BY MOLECULAR-BEAM EPITAXY [J].

IWAMURA, H ;

SAKU, T ;

KOBAYASHI, H ;

HORIKOSHI, Y .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2692-2695

[7] POLARIZATION-DEPENDENT GAIN-CURRENT RELATIONSHIP IN GAAS-ALGAAS MQW LASER-DIODES [J].

KOBAYASHI, H ;

IWAMURA, H ;

SAKU, T ;

OTSUKA, K .

ELECTRONICS LETTERS, 1983, 19 (05) :166-168

[8] LARGE ROOM-TEMPERATURE OPTICAL NONLINEARITY IN GAAS/GA1-X ALXAS MULTIPLE QUANTUM WELL STRUCTURES [J].

MILLER, DAB ;

CHEMLA, DS ;

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GOSSARD, AC ;

TSANG, WT .

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[9]

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[10] REFRACTIVE-INDEX OF GAAS-ALAS SUPER-LATTICE GROWN BY MBE [J].

SUZUKI, Y ;

OKAMOTO, H .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) :397-411

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