AUTOMATIC PREPARATION OF TIC SINGLE-CRYSTALS BY THE FLOATING ZONE TECHNIQUE

An apparatus for automatic preparation of TiC single crystals was developed by using the RF heating floating zone method. Crystals 1 cm diameter and 6 cm long were thus prepared. The apparatus is attached to an RF generator (200 kHz, 40 kW) This apparatus consisted mainly of a micro-computer and two digital voltmeters. The voltmeters were used for measurements of the anode voltage and the RF current, and were connected with the computer. The computer determined the zone shape from the ratio of the RF current to the anode voltage, and controlled the anode voltage by which the output of the generator for the floating zone method is controlled. The crystal was prepared at a pressure of 6-7 atm of ambient helium gas. The growth rate was 1 cm/h.