INVESTIGATIONS OF HYDROGEN IMPLANTED GAP SINGLE-CRYSTALS BY MEANS OF PARTICLE INDUCED GAMMA-SPECTROSCOPY, INFRARED-SPECTROSCOPY, AND RUTHERFORD BACKSCATTERING CHANNELING TECHNIQUE

被引：23

作者：

ASCHERON, C ^{[1
]}

BAUER, C ^{[1
]}

SOBOTTA, H ^{[1
]}

RIEDE, V ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,ZENT INST KERNFORSCH,ROSSENDORF,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 89卷 / 02期

关键词：

RADIATION DAMAGE - SEMICONDUCTING INDIUM COMPOUNDS - Defects - SPECTROSCOPIC ANALYSIS;

D O I：

10.1002/pssa.2210890216

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The incorporation of hydrogen into GaP single crystals bombarded with 0. 3 and 1. 0 MeV protons investigated in the fluence range to 10**1**8 cm** minus **2. The combination of techniques enables study of hydrogen incorporation, hydrogen trapping, lattice damage and the satio of the chemically bonded to the total incorporated amount of hydrogen dependent on the defect profile. The use of ion beam etching technique allows investigation of depth profiles within larger depth regions. For comparison, deuterium implanted and annealed GaP and InP crystals were studied.

引用

页码：549 / 557

页数：9

共 28 条

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