RELATIONSHIP BETWEEN ELECTRICAL-CONDUCTIVITY AND CHARGED-DANGLING-BOND DENSITY IN NITROGEN-DOPED AND PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：4

作者：

MASUDA, A ^{[1
]}

ITOH, K ^{[1
]}

ZHOU, JH ^{[1
]}

KUMEDA, M ^{[1
]}

SHIMIZU, T ^{[1
]}

机构：

[1] KANAZAWA UNIV, FAC TECHNOL, DEV ENGN MAT LAB, KANAZAWA 920, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 9B期

关键词：

HYDROGENATED AMORPHOUS SILICON; NITROGEN DOPING; PHOSPHORUS DOPING; ELECTRICAL CONDUCTIVITY; CHARGED-DANGLING-BOND DENSITY; LIGHT-INDUCED ELECTRON SPIN RESONANCE; POTENTIAL FLUCTUATIONS;

D O I：

10.1143/JJAP.33.L1295

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Comparing the results for nitrogen doping in hydrogenated amorphous silicon (a-Si:H) with those for phosphorus doping, the increase in the charged-dangling-bond density estimated by equilibrium electron spin resonance (ESR) and light-induced ESR is found to have no apparent correlation with the increase in the electrical conductivity. The results for varying concentrations of nitrogen doping are also consistent with this finding. The increase of potential fluctuations due to structural disorder by nitrogen doping in an a-Si:H network appears to be the dominant origin of the increase of charged dangling bonds in the case of nitrogen doping.

引用

页码：L1295 / L1297

页数：3

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