ELECTRICAL-PROPERTIES OF JUNCTIONS BETWEEN SPUTTER DEPOSITED SILICON FILMS AND MONOCRYSTALLINE SILICON

被引：2

作者：

KOSHY, J

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 79卷 / 01期

关键词：

D O I：

10.1002/pssa.2210790144

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K21 / K24

页数：4

共 10 条

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[9] ELECTRICAL-PROPERTIES OF JUNCTIONS BETWEEN GE FILMS AND MONO-CRYSTALLINE SILICON [J].

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