ANISOTROPIC ETCHING OF AL BY A DIRECTED CL2 FLUX

[1] EFFECTS OF DIFFERENTIAL ETCHING AND MASKING RESIST PREPARATION ON THE QUALITY OF THE REACTIVE-ION-ETCHED ALUMINUM AND ALUMINUM-ALLOYS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (06) : 955 - 967

[2] FORTE A, COMMUNICATION

[3] LARGE AREA ION-BEAM ASSISTED ETCHING OF GAAS WITH HIGH ETCH RATES AND CONTROLLED ANISOTROPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1043 - 1046

[4] SCHWARTZ GC, 1985, 5TH P S PLASM PROC, P26

[5] TSOU LY, 1984, EL SOC EXT ABSTR, P134

[6] WEST RC, 1966, CRC CHEM PHYSICS, pD109

[1] EFFECTS OF DIFFERENTIAL ETCHING AND MASKING RESIST PREPARATION ON THE QUALITY OF THE REACTIVE-ION-ETCHED ALUMINUM AND ALUMINUM-ALLOYS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (06) : 955 - 967

[2] FORTE A, COMMUNICATION

[3] LARGE AREA ION-BEAM ASSISTED ETCHING OF GAAS WITH HIGH ETCH RATES AND CONTROLLED ANISOTROPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1043 - 1046

[4] SCHWARTZ GC, 1985, 5TH P S PLASM PROC, P26

[5] TSOU LY, 1984, EL SOC EXT ABSTR, P134

[6] WEST RC, 1966, CRC CHEM PHYSICS, pD109