UNIVERSALITY OF THE HALL-EFFECT IN A MAGNETIC-FIELD-LOCALIZED 2-DIMENSIONAL ELECTRON-SYSTEM

被引：64

作者：

GOLDMAN, VJ ^{[1
]}

WANG, JK ^{[1
]}

SU, B ^{[1
]}

SHAYEGAN, M ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.70.647

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report Hall effect measurements of the localized two-dimensional electron system at low Landau level filling factors v, including the regime previously identified as a pinned Wigner crystal. We find that the Hall resistivity is universally given by the classical, free-electron gas value of h/ve2 to within 5% even when the diverging diagonal resistivity reaches approximately 100h/ve2. This implies that both Hall and diagonal conductivities approach zero in the localized regime.

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页码：647 / 650

页数：4

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