NOISE MEASUREMENTS IN RESONANT-TUNNELING STRUCTURES AS A FUNCTION OF CURRENT AND TEMPERATURE

被引：13

作者：

CIAMBRONE, P ^{[1
]}

MACUCCI, M ^{[1
]}

IANNACCONE, G ^{[1
]}

PELLEGRINI, B ^{[1
]}

LAZZARINO, M ^{[1
]}

SORBA, L ^{[1
]}

BELTRAM, F ^{[1
]}

机构：

[1] LAB TASC INFM,I-34012 TRIESTE,ITALY

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 06期

关键词：

RESONANT TUNNELING DEVICES; SEMICONDUCTOR DEVICE NOISE;

D O I：

10.1049/el:19950315

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors present the results of noise measurements performed on custom designed resonant tunnelling structures. The shot-noise suppression has been measured as a function of bias current and temperature in the 14-223K range, and results have been compared with those predicted by existing theories.

引用

页码：503 / 505

页数：3

共 8 条

[1] ANALYTIC MODEL OF SHOT NOISE IN DOUBLE-BARRIER RESONANT-TUNNELING DIODES [J].