EFFECTS OF ELECTRON-CYCLOTRON-RESONANCE PLASMA THERMAL-OXIDATION ON THE PROPERTIES OF POLYCRYSTALLINE SILICON FILM

被引：15

作者：

LEE, JY

HAN, CH

KIM, CK

KIM, BK

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA

[2] HYUNDAI ELECTR IND CO LTD,KYUNGKIDO,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 13期

关键词：

D O I：

10.1063/1.114363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical and electrical properties of polycrystalline silicon (poly-Si) film with electron cyclotron resonance (ECR) plasma oxidation have been investigated. Density of dangling bonds in the poly-Si film was decreased significantly after oxidizing by ECR oxygen plasma. It was found that oxygen ions generated during the ECR plasma oxidation process diffuse into the poly-Si film, and passivate the dangling bonds. Also, it was found that the poly-Si film with ECR plasma oxidation has better thermal stability than hydrogen-passivated poly-Si film, which can be explained by the higher energy of Si-O bond than that of Si-H. (C) 1995 American Institute of Physics.

引用

页码：1880 / 1882

页数：3

共 14 条

[1] OXIDATION OF SILICON IN AN ELECTRON-CYCLOTRON RESONANCE OXYGEN PLASMA - KINETICS, PHYSICOCHEMICAL, AND ELECTRICAL-PROPERTIES [J].