EFFECTS OF ELECTRON-CYCLOTRON-RESONANCE PLASMA THERMAL-OXIDATION ON THE PROPERTIES OF POLYCRYSTALLINE SILICON FILM

被引:15
作者
LEE, JY
HAN, CH
KIM, CK
KIM, BK
机构
[1] KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA
[2] HYUNDAI ELECTR IND CO LTD,KYUNGKIDO,SOUTH KOREA
关键词
D O I
10.1063/1.114363
中图分类号
O59 [应用物理学];
学科分类号
摘要
The optical and electrical properties of polycrystalline silicon (poly-Si) film with electron cyclotron resonance (ECR) plasma oxidation have been investigated. Density of dangling bonds in the poly-Si film was decreased significantly after oxidizing by ECR oxygen plasma. It was found that oxygen ions generated during the ECR plasma oxidation process diffuse into the poly-Si film, and passivate the dangling bonds. Also, it was found that the poly-Si film with ECR plasma oxidation has better thermal stability than hydrogen-passivated poly-Si film, which can be explained by the higher energy of Si-O bond than that of Si-H. (C) 1995 American Institute of Physics.
引用
收藏
页码:1880 / 1882
页数:3
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