MEASUREMENT OF THE NONLINEAR REFRACTIVE-INDEX OF SEMICONDUCTORS INCLUDED IN MONOLITHIC ETALONS

被引:12
作者
SFEZ, BG
KUSZELEWICZ, R
OUDAR, JL
机构
[1] Centre National d’Etudes des Télécommunications, Bagneux, 92220
关键词
D O I
10.1364/OL.16.000855
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We describe a measurement technique for the determination of the nonlinear refractive index of semiconductors embedded in a Fabry-Perot cavity. This method relates the intensity-dependent spectral shift of the resonance peak to the nonlinear index variations. The use of square pulses allows the decoupling of electronic and thermal nonlinearities. Our experimental results show that this method is particularly suitable for measuring the nonlinear-optical properties of monolithic semiconductor etalons with integrated Bragg reflectors.
引用
收藏
页码:855 / 857
页数:3
相关论文
共 16 条
[1]   DIRECT INTERFEROMETRIC MEASUREMENTS OF NONLINEAR REFRACTIVE-INDEX COEFFICIENT N2 IN LASER MATERIALS [J].
BLISS, ES ;
SPECK, DR ;
SIMMONS, WW .
APPLIED PHYSICS LETTERS, 1974, 25 (12) :728-730
[2]  
GIBBS HM, 1982, APPL PHYS LETT, V41, P221, DOI 10.1063/1.93490
[3]   OPTICAL BISTABILITY IN SEMICONDUCTORS [J].
GIBBS, HM ;
MCCALL, SL ;
VENKATESAN, TNC ;
GOSSARD, AC ;
PASSNER, A ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1979, 35 (06) :451-453
[4]   HIGH-FINESSE (AL,GA)AS INTERFERENCE FILTERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
JEWELL, JL ;
LEE, YH ;
MCCALL, SL ;
HARBISON, JP ;
FLOREZ, LT .
APPLIED PHYSICS LETTERS, 1988, 53 (08) :640-642
[5]   MONOLITHIC GAAS/ALAS OPTICAL BISTABLE ETALONS WITH IMPROVED SWITCHING CHARACTERISTICS [J].
KUSZELEWICZ, R ;
OUDAR, JL ;
MICHEL, JC ;
AZOULAY, R .
APPLIED PHYSICS LETTERS, 1988, 53 (22) :2138-2140
[6]  
LEE YH, 1986, APPL PHYS LETT, V49, P22
[7]  
MCCALL SL, 1986, C LASERS ELECTROOPTI
[8]   LARGE ROOM-TEMPERATURE OPTICAL NONLINEARITY IN GAAS/GA1-X ALXAS MULTIPLE QUANTUM WELL STRUCTURES [J].
MILLER, DAB ;
CHEMLA, DS ;
EILENBERGER, DJ ;
SMITH, PW ;
GOSSARD, AC ;
TSANG, WT .
APPLIED PHYSICS LETTERS, 1982, 41 (08) :679-681
[9]   BAND-GAP-RESONANT NON-LINEAR REFRACTION IN III-V SEMICONDUCTORS [J].
MILLER, DAB ;
SEATON, CT ;
PRISE, ME ;
SMITH, SD .
PHYSICAL REVIEW LETTERS, 1981, 47 (03) :197-200
[10]  
MILLER DAB, 1983, APPL PHYS LETT, V49, P925