SURFACE-TOPOGRAPHY AND ORDERING-VARIANT SEGREGATION IN GALNP2

被引:35
作者
FRIEDMAN, DJ [1 ]
ZHU, JG [1 ]
KIBBLER, AE [1 ]
OLSON, JM [1 ]
MORELAND, J [1 ]
机构
[1] NATL INST STAND & TECHNOL, BOULDER, CO 80303 USA
关键词
D O I
10.1063/1.110658
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using transmission electron diffraction dark-field imaging, atomic force microscopy (AFM), and Nomarski microscopy, we demonstrate a direct connection between surface topography and cation site ordering in GaInP2. We study epilayers grown by organometallic vapor-phase epitaxy on GaAs substrates oriented 2-degrees off ( 100) towards (110). Nomarski microscopy shows that, as growth proceeds, the surface of ordered material forms faceted structures aligned roughly along [011]. A comparison with the dark-field demonstrates that the [111BAR] and [111BAR] ordering variants are segregated into complementary regions corresponding to opposite-facing facets of the surface structures. This observation cannot be rationalized with the obvious but naive model of the surface topography as being due to faceting into low-index planes. However, AFM reveals that the facets are in fact not low-index planes, but rather are tilted 4-degrees from (100) towards (111) B. This observation explains the segregation of the variants: the surface facets act as local (111) B-misoriented growth surfaces which select only one of the two variants.
引用
收藏
页码:1774 / 1776
页数:3
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