FURTHER EVIDENCE FOR THE B-SI(-)-C+ MODEL OF THE BORON ACCEPTOR IN 6H SILICON-CARBIDE FROM A THEORETICAL-ANALYSIS OF THE HYPERFINE INTERACTIONS

被引：16

作者：

ADRIAN, FJ ^{[1
]}

GREULICHWEBER, S ^{[1
]}

SPAETH, JM ^{[1
]}

机构：

[1] TH DARMSTADT,D-64287 DARMSTADT,GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 94卷 / 01期

关键词：

SEMICONDUCTORS; POINT DEFECTS; ELECTRONIC STATES;

D O I：

10.1016/0038-1098(94)00922-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A semiempirical analysis of the sizes and signs of the small boron hyperfine interaction constants as determined previously by electron nuclear double resonance in boron-doped 6H silicon carbide shows that the B-Si(-)-C+ model of this centre can account for the highly unusual feature of small isotropic and anisotropic boron hyperfine constants that are positive and negative, respectively.

引用

页码：41 / 44

页数：4

共 9 条

[1] THEORY OF INDIRECT HYPERFINE INTERACTIONS OF OXYGEN-ALUMINUM DEFECTS IN IONIC-CRYSTALS [J].