ELECTROLUMINESCENCE IN SEMICONDUCTORS

被引：10

作者：

DEAN, PJ ^{[1
]}

机构：

[1] ROY RADAR ESTAB,GREAT MALVERN,WORCESTERSHIRE,ENGLAND

来源：

JOURNAL OF LUMINESCENCE | 1976年 / 12卷 / 01期

关键词：

D O I：

10.1016/0022-2313(76)90068-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：83 / 95

页数：13

共 31 条

[1] ROOM-TEMPERATURE DEEP-STATE EMISSION-SPECTRA, RADIATIVE EFFICIENCY, AND LIFETIME OF SOME GAP - TE,N CRYSTALS [J].

BACHRACH, RZ ;

DAPKUS, PD ;

LORIMOR, OG .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4971-4973

[2]

BHARGAVA RN, 1975, P IEEE T ED SEP

[3]

BLENKINSOP ID, TO BE PUBLISHED

[4] RECOMBINATION PROCESSES INVOLVING ZN AND N IN GAAS1-XPX [J].

CAMPBELL, JC ;

HOLONYAK, N ;

LEE, MH ;

KUNZ, AB .

PHYSICAL REVIEW B, 1974, 10 (04) :1755-1757

[5]

COHEN E, TO BE PUBLISHED

[6]

Dapkus P. D., 1974, J APPL PHYS, V45, P4290

[7]

DEAN PAW, UNPUBLISHED DATA

[8] DEEP HOLE TRAPS IN N-TYPE LIQUID ENCAPSULATED CZOCHRALSKI GAP [J].

DISHMAN, JM ;

DALY, DF ;

KNOX, WP .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) :4693-+

[9] THERMALLY STIMULATED CURRENT MEASUREMENTS IN N-TYPE LEC GAP [J].

FABRE, E ;

BHARGAVA, RN ;

ZWICKER, WK .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (02) :409-430

[10]

Faulkner R. A., 1970, J LUMIN, V1, P552

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