DETECTION OF SLOW TRAPS IN THE OXIDE OF MOS-TRANSISTORS BY A NEW CURRENT DLTS TECHNIQUE

被引：5

作者：

BAUZA, D

机构：

[1] ENSERO, Laboratoire de Physique des Composants à Semiconducteurs, F-380I6, Grenoble

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 06期

关键词：

MOS INTEGRATED CIRCUITS; ELECTRON TRAPS; SPECTROSCOPY;

D O I：

10.1049/el:19940345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that in MOS transistors, the traps in the oxide that interact with the semiconductor by the tunnelling of carriers, induce a transient on the drain current when the device is switched from accumulation to strong inversion. Their density can be extracted as in deep level transient spectroscopy.

引用

页码：484 / 485

页数：2

共 5 条

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[5]

VUILLAUME D, 1988, PHYS REV B, V38, P13124

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