OXIDE TRAPS IN SI-SIO2 STRUCTURES CHARACTERIZED BY TUNNEL EMISSION WITH DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：67

作者：

VUILLAUME, D ^{[1
]}

BOURGOIN, JC ^{[1
]}

LANNOO, M ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.34.1171

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1171 / 1183

页数：13

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