REDUCED INTERMODULATION DISTORTION IN 1300-NM GAIN-CLAMPED MQW LASER-AMPLIFIERS

被引:37
作者
TIEMEIJER, LF
THIJS, PJA
DONGEN, T
BINSMA, JJM
JANSEN, EJ
VANHELLEPUTTE, HRJR
机构
[1] Philips Optoelectronics Centre, 5656 AA Eindhoven
[2] Philips Research Laboratories, 5656 AA Eindhoven
关键词
D O I
10.1109/68.372747
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 1300 nm gain-clamped DFB multiple quantum well laser amplifier with negligible pass-band ripple, 20 dB fiber to fiber gain, and 10 dB reduction in gain saturation is demonstrated, The remaining gain saturation is attributed to longitudinal hole burning, After some modifications the; reduction in gain saturation is improved to more than 30 dB for an input sig?al having the same polarization state as the lasing mode, From these experiments and a theoretical analysis it is concluded that there is a potential for realizing highly linear 1300 nm CATV semiconductor laser amplifiers using gain-clamping with less intermodulation distortion than today's directly modulated linear semiconductor lasers.
引用
收藏
页码:284 / 286
页数:3
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