COPPER NITRIDE THIN-FILMS PREPARED BY RADIOFREQUENCY REACTIVE SPUTTERING

被引：142

作者：

MARUYAMA, T

MORISHITA, T

机构：

[1] Department of Chemical Engineering, Faculty of Engineering, Kyoto University, Sakyo-ku, Kyoto 606, Yoshida-Honmachi

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 06期

关键词：

D O I：

10.1063/1.359868

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Copper nitride thin films were obtained by the reactive sputtering method. A metallic copper target was sputtered in nitrogen gas with radio-frequency (rf) magnetron sputtering equipment. Highly [100]-oriented polycrystalline films of the cubic anti-ReO3 structure were obtained. Films with a lattice constant above 3.868 Angstrom were conductors, while films with a lattice constant below 3.868 Angstrom were insulators. The resistivity of conducting films was 0.5-3X10(-2) Omega cm. The insulating films showed an optical energy gap of 1.3 eV, while the conducting films showed a smaller value which decreased with decreasing resistivity. (C) 1995 American Institute of Physics.

引用

页码：4104 / 4107

页数：4

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