A STUDY OF THE GROUND-STATE OF ACCEPTORS IN SILICON FROM THERMAL TRANSPORT EXPERIMENTS

被引：6

作者：

DEGOER, AM ^{[1
]}

LOCATELLI, M ^{[1
]}

LASSMANN, K ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC6期

关键词：

D O I：

10.1051/jphyscol:1981667

中图分类号：

学科分类号：

摘要：

引用

页码：235 / 237

页数：3

共 5 条

[1] THERMAL-CONDUCTIVITY OF PARA-GE DOWN TO 50 MK [J].

CHALLIS, LJ ;

GOER, AMD ;

HASELER, SC .

[2]

DECOMBARIEU A, 1976, PHONON SCATTERING SO, P340

[3] ABSORPTION OF OXYGEN IN SILICON IN FAR INFRARED [J].

HAYES, W ;

BOSOMWORTH, DR .

[4]

Lassmann K., 1980, Phonon Scattering in Condensed Matter. Proceedings of the Third International Conference, P369

[5]

Sigmund E., 1980, Phonon Scattering in Condensed Matter. Proceedings of the Third International Conference, P417