INFINITE-MELT VERTICAL LIQUID-PHASE EPITAXY OF HGCDTE FROM HG SOLUTION - STATUS AND PROSPECTS

被引：55

作者：

TUNG, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90713-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：161 / 172

页数：12

共 53 条

[1] CRYSTAL-GROWTH OF CD1-XZNXTE AND ITS USE AS A SUPERIOR SUBSTRATE FOR LPE GROWTH OF HG0.8CD0.2TE [J].

BELL, SL ;

SEN, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :112-115

[2] GROWTH OF HIGH MOBILITY N-TYPE CDTE BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J].

BICKNELL, RN ;

GILES, NC ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1095-1097

[3] COMPARISON OF HG0.6CD0.4TE LPE LAYER GROWTH FROM TE-RICH, HG-RICH, AND HGTE-RICH SOLUTIONS [J].

BOWERS, JE ;

SCHMIT, JL ;

SPEERSCHNEIDER, CJ ;

MACIOLEK, RB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :24-28

[4] POTENTIAL BARRIERS IN HGCDTE HETEROJUNCTIONS [J].

BRATT, PR ;

CASSELMAN, TN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :238-245

[5] HGCDTE HETEROJUNCTIONS [J].

BRATT, PR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1687-1691

[6]

BRATT PR, 1981, F3361577C5270 SANT B

[7]

Brebrick R.F., 1983, SEMICONDUCTORS SEMIM, V19

[8]

BREBRICK RF, 1986, COMMUNICATION

[9]

BREBRICK RF, 1966, PROGR SOLID STATE CH, V3

[10]

BREBRICK RF, 1975, TREATISE SOLID STATE, V2

← 1 2 3 4 5 6 →