MEMORY SEU SIMULATIONS USING 2-D TRANSPORT CALCULATIONS

被引：28

作者：

FU, JS

AXNESS, CL

WEAVER, HT

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 08期

关键词：

D O I：

10.1109/EDL.1985.26177

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：422 / 424

页数：3

共 7 条

[1]

FU JS, 1984, IEEE T ELECTRON DEV, V31, P440, DOI 10.1109/T-ED.1984.21548

[2] 2-DIMENSIONAL SIMULATION OF SINGLE EVENT INDUCED BIPOLAR CURRENT IN CMOS STRUCTURES [J].

FU, JS ;

AXNESS, CL ;

WEAVER, HT .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1155-1160

[3] A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES [J].

HSIEH, CM ;

MURLEY, PC ;

OBRIEN, RR .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :103-105

[4] CHARGE COLLECTION IN MULTILAYER STRUCTURES [J].

KNUDSON, AR ;

CAMPBELL, AB ;

SHAPIRO, P ;

STAPOR, WJ ;

WOLICKI, EA ;

PETERSEN, EL ;

DIEHLNAGLE, SE ;

HAUSER, J ;

DRESSENDORFER, PV .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1149-1154

[5]

KRESKOVSKY JP, 1985, UNPUB 4 NASECODE

[6] COMPARISON OF ANALYTICAL MODELS AND EXPERIMENTAL RESULTS FOR SINGLE EVENT UPSET IN CMOS SRAMS [J].

MNICH, TM ;

DIEHL, SE ;

SHAFER, BD ;

KOGA, R ;

KOLASINSKI, WA ;

OCHOA, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4620-4623

[7]

MOCK MS, 1983, 3 P NASECODE C DUBL, P1911

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