COMPARISON OF ANALYTICAL MODELS AND EXPERIMENTAL RESULTS FOR SINGLE EVENT UPSET IN CMOS SRAMS

被引：19

作者：

MNICH, TM

DIEHL, SE

SHAFER, BD

KOGA, R

KOLASINSKI, WA

OCHOA, A

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT ENGN,RALEIGH,NC 27607

[2] AEROSPACE CORP,LOS ANGELES,CA 90009

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333184

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4620 / 4623

页数：4

共 8 条

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[6] RADIATION HARD DESIGN PRINCIPLES UTILIZED IN CMOS-8085 MICROPROCESSOR FAMILY [J].

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[7]

MCLEAN FB, 1982, IEEE T NUCL SCI, V29, P2018

[8] RADIATION TESTING OF THE CMOS-8085 MICROPROCESSOR FAMILY [J].

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4235-4239

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