RADIATION TESTING OF THE CMOS-8085 MICROPROCESSOR FAMILY

被引：7

作者：

SEXTON, FW

ANDERSON, RE

CORBETT, WT

GIDDINGS, AE

JORGENSEN, JL

KIM, WS

MNICH, TM

NORDSTROM, TV

OCHOA, A

SOBOLEWSKI, MA

TREECE, RK

WROBEL, TF

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333114

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4235 / 4239

页数：5

共 7 条

[1] RADIATION HARD DESIGN PRINCIPLES UTILIZED IN CMOS-8085 MICROPROCESSOR FAMILY [J].

KIM, WS ;

MNICH, TM ;

CORBETT, WT ;

TREECE, RK ;

GIDDINGS, AE ;

JORGENSEN, JL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4229-4234

[2] COMPARISON OF ANALYTICAL MODELS AND EXPERIMENTAL RESULTS FOR SINGLE EVENT UPSET IN CMOS SRAMS [J].

MNICH, TM ;

DIEHL, SE ;

SHAFER, BD ;

KOGA, R ;

KOLASINSKI, WA ;

OCHOA, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4620-4623

[3] THE EFFECT OF GATE OXIDE THICKNESS ON THE RADIATION HARDNESS OF SILICON-GATE CMOS [J].

NORDSTROM, TV ;

GIBBON, CF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4349-4353

[4]

NORDSTROM TV, 1983, 5TH IEEE CUST INT CI

[5] LATCH-UP CONTROL IN CMOS INTEGRATED-CIRCUITS [J].

OCHOA, A ;

DAWES, W ;

ESTREICH, D .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) :5065-5068

[6] IRRADIATED SILICON GATE MOS DEVICE BIAS ANNEALING [J].

SCHWANK, JR ;

DAWES, WR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4100-4104

[7] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J].

SUN, SC ;

PLUMMER, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1497-1508

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