USE OF EOS (ELECTROLYTE OXIDE SEMICONDUCTOR) SYSTEMS FOR THE ELECTRICAL CHARACTERIZATION OF ILLUMINATED SEMICONDUCTOR DIELECTRIC INTERFACES

被引:1
作者
DIOT, JL
JOSEPH, J
MARTIN, JR
CLECHET, P
机构
关键词
D O I
10.1016/0022-0728(86)80162-0
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
引用
收藏
页码:381 / 385
页数:5
相关论文
共 11 条
[1]   DEPENDENCE OF INTERFACE STATE PROPERTIES OF ELECTROLYTE-SIO2-SI STRUCTURES ON PH [J].
BARABASH, PR ;
COBBOLD, RSC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) :102-108
[2]   THE HISTORY OF CHEMICALLY SENSITIVE SEMICONDUCTOR-DEVICES [J].
BERGVELD, P ;
DEROOIJ, NF .
SENSORS AND ACTUATORS, 1981, 1 (01) :5-15
[3]   ON THE IMPEDANCE OF THE SILICON DIOXIDE ELECTROLYTE INTERFACE [J].
BOUSSE, L ;
BERGVELD, P .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1983, 152 (1-2) :25-39
[4]   THE ROLE OF BURIED OH-SITES IN THE RESPONSE MECHANISM OF INORGANIC-GATE PH-SENSITIVE ISFETS [J].
BOUSSE, L ;
BERGVELD, P .
SENSORS AND ACTUATORS, 1984, 6 (01) :65-78
[5]  
Bousse L, 1982, THESIS TWENTE U TECH
[6]  
DEROOIJ NF, 1978, PHYSICS SIO2 ITS INT, P433
[7]   PH-DEPENDENCE OF THE SI/SIO2 INTERFACE STATE DENSITY FOR EOS SYSTEMS - QUASI-STATIC AND AC CONDUCTANCE METHODS [J].
DIOT, JL ;
JOSEPH, J ;
MARTIN, JR ;
CLECHET, P .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1985, 193 (1-2) :75-88
[8]   DETERMINATION OF SEMICONDUCTOR QUASI-FERMI LEVEL SEPARATION UNDER ILLUMINATION [J].
KAR, S ;
VARMA, S .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1988-1990
[9]   SI3N4-SI ION-SENSITIVE SEMICONDUCTOR ELECTRODE [J].
LAUKS, IR ;
ZEMEL, JN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) :1959-1964
[10]   ADMITTANCE MEASUREMENTS OF SI-SIO2 INTERFACE STATES UNDER OPTICAL ILLUMINATION [J].
POON, TC ;
CARD, HC .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5880-5888