USE OF EOS (ELECTROLYTE OXIDE SEMICONDUCTOR) SYSTEMS FOR THE ELECTRICAL CHARACTERIZATION OF ILLUMINATED SEMICONDUCTOR DIELECTRIC INTERFACES

被引:1
作者
DIOT, JL
JOSEPH, J
MARTIN, JR
CLECHET, P
机构
关键词
D O I
10.1016/0022-0728(86)80162-0
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
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页码:381 / 385
页数:5
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[11]   ENERGY AND ELECTRIC-FIELD DEPENDENCE OF SI-SIO2 INTERFACE STATE PARAMETERS BY OPTICALLY ACTIVATED ADMITTANCE EXPERIMENTS [J].
POON, TC ;
CARD, HC .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6273-6278