ENERGY AND ELECTRIC-FIELD DEPENDENCE OF SI-SIO2 INTERFACE STATE PARAMETERS BY OPTICALLY ACTIVATED ADMITTANCE EXPERIMENTS

[1] ELECTRONIC STRUCTURE OF DEFECT CENTERS IN SIO2 [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) : 1251 - &

[2] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +

[3] CHENG YC, 1977, PROG SURF SCI, V8, P182, DOI 10.1016/0079-6816(77)90003-X

[4] DAHLKE WE, 1979, SOLID STATE ELECTRON, V22, P893, DOI 10.1016/0038-1101(79)90058-3

[5] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[6] DETERMINATION OF SURFACE-STATE PARAMETERS FROM TRANSFER-LOSS MEASUREMENTS IN CCDS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 398 - 401

[7] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +

[8] LANGHLIN RB, 1978, PHYSICS SIO2 ITS INT, P321

[9] THEORY OF BOUND-STATES ASSOCIATED WITH N-TYPE INVERSION LAYERS ON SILICON [J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5644 - 5648

[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[1] ELECTRONIC STRUCTURE OF DEFECT CENTERS IN SIO2 [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) : 1251 - &

[2] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +

[3] CHENG YC, 1977, PROG SURF SCI, V8, P182, DOI 10.1016/0079-6816(77)90003-X

[4] DAHLKE WE, 1979, SOLID STATE ELECTRON, V22, P893, DOI 10.1016/0038-1101(79)90058-3

[5] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[6] DETERMINATION OF SURFACE-STATE PARAMETERS FROM TRANSFER-LOSS MEASUREMENTS IN CCDS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 398 - 401

[7] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +

[8] LANGHLIN RB, 1978, PHYSICS SIO2 ITS INT, P321

[9] THEORY OF BOUND-STATES ASSOCIATED WITH N-TYPE INVERSION LAYERS ON SILICON [J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5644 - 5648

[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +