CHARACTERIZATION OF ROUGH SILICON SURFACES USING SPECTROSCOPIC ELLIPSOMETRY, REFLECTANCE, SCANNING ELECTRON-MICROSCOPY AND SCATTERING MEASUREMENTS

被引：10

作者：

PICKERING, C ^{[1
]}

GREEF, R ^{[1
]}

HODGE, AM ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,DEPT CHEM,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1990年 / 5卷 / 02期

关键词：

D O I：

10.1016/0921-5107(90)90072-J

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A critical comparison of several techniques for the evaluation of imperfections in silicon-on-sapphire (SOS) wafers leads to the adoption of a model of the SOS surface based on an effective medium approximation treatment of the ellipsometric results. © 1990.

引用

页码：295 / 299

页数：5

共 12 条

[1] INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY [J].

ASPNES, DE ;

THEETEN, JB .

PHYSICAL REVIEW B, 1979, 20 (08) :3292-3302

[2]

ASPNES DE, 1983, J PHYS PARIS C10, V44, P363

[3] RELATION BETWEEN SURFACE ROUGHNESS AND SPECULAR REFLECTANCE AT NORMAL INCIDENCE [J].

BENNETT, HE ;

PORTEUS, JO .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1961, 51 (02) :123-+

[4] RESIDUAL SURFACE-ROUGHNESS OF DIAMOND-TURNED OPTICS [J].

CHURCH, EL ;

ZAVADA, JM .

APPLIED OPTICS, 1975, 14 (08) :1788-1795

[5] MEASUREMENT OF THE NEAR-SURFACE CRYSTALLINITY OF SILICON ON SAPPHIRE BY UV REFLECTANCE [J].

DUFFY, MT ;

CORBOY, JF ;

CULLEN, GW ;

SMITH, RT ;

SOLTIS, RA ;

HARBEKE, G ;

SANDERCOCK, JR ;

BLUMENFELD, M .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :10-18

[6] ROUGH SILICON SURFACES STUDIED BY OPTICAL METHODS [J].

OHLIDAL, I ;

LUKES, F ;

NAVRATIL, K .

SURFACE SCIENCE, 1974, 45 (01) :91-116

[7] ANGLE-RESOLVED LIGHT-SCATTERING-STUDIES OF SILICON-ON-SAPPHIRE [J].

PICKERING, C ;

DIXON, S ;

GASSON, DB ;

ROBBINS, DJ ;

HODGE, AM .

JOURNAL OF CRYSTAL GROWTH, 1987, 84 (01) :180-183

[8]

PICKERING C, 1988, 17TH P EUR SOL STAT, P615

[9]

PICKERING C, 1986, MATER RES SOC S P, V53, P317

[10] SPECULAR REFLECTANCE AND SURFACE-ROUGHNESS OF SILICON ON SAPPHIRE [J].

ROBERTSON, GD ;

BARON, R ;

VASUDEV, PK ;

MARSH, OJ .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :691-697

← 1 2 →