INVESTIGATION OF AMORPHOUS TO CRYSTALLINE TRANSITIONS IN INSE THIN-FILMS

被引：11

作者：

RAO, SR ^{[1
]}

NAGABHOOSHANAM, M ^{[1
]}

BABU, VH ^{[1
]}

机构：

[1] OSMANIA UNIV, PG COLL SCI, DEPT PHYS, HYDERABAD 500004, INDIA

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1990年 / 25卷 / 01期

关键词：

D O I：

10.1002/crat.2170250111

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The amorphous to crystalline transitions in InSe films have been investigated by different techniques. InSe compound was prepared from non‐stoichiometric amounts of indium and selenium in vacuum. The electrical conductivity and thermoelectric power measurements were made in films of different thicknesses and annealed for different times. TEP studies revealed that the films are p‐type. The conductivity studies have shown transition from amorphous to crystalline. The transition temperature is found to decrease with increase in (i) the thickness of the film, (ii) the time of annealing. Electronmicrographs and selected area diffraction patterns on as‐grown and annealed films have been taken and correlated with the conductivity results. The mechanism involved in the amorphous to crystalline transitions has been discussed. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：55 / 60

页数：6

共 14 条

[1] OPTICAL-PROPERTIES AND PHOTO-VOLTAIC DEVICE APPLICATIONS OF INSE FILMS [J].

ANDO, K ;

KATSUI, A .

THIN SOLID FILMS, 1981, 76 (02) :141-147

[2] FABRICATION AND CHARACTERIZATION OF THE LAMELLAR TERNARY COMPOUNDS GAXIN1-XSE [J].

GOUSKOV, L ;

GOUSKOV, A ;

HAJJAR, M ;

SOONCKINDT, L ;

LLINARES, C .

PHYSICA B & C, 1980, 99 (1-4) :291-298

[3] INFLUENCE OF THE AMORPHOUS STATE ON THE STRUCTURE OF CRYSTALLINE ANTIMONY FILMS [J].

KAISER, N ;

MULLER, H ;

GLOEDE, C .

THIN SOLID FILMS, 1981, 85 (3-4) :293-296

[4]

MOTT NF, 1971, ELECTRONIC PROCESSES

[5] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J].

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1968, 21 (20) :1450-+

[6]

Patel S. M., 1981, Indian Journal of Physics, Part A, V55A, P126

[7] ELECTRICAL-PROPERTIES OF ANNEALED INSB THIN-FILMS [J].

RAO, SR ;

NAGABHOOSHANAM, M ;

BABU, VH .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (02) :K195-&

[8]

RAO SR, THESIS OSMANIA U HYD

[9]

SASTRY DVK, 1983, PHYS STATUS SOLIDI A, V75, pK183, DOI 10.1002/pssa.2210750261

[10] PHOTO-VOLTAIC EFFICIENCY OF INSE SOLAR-CELLS [J].

SEGURA, A ;

CHEVY, A ;

GUESDON, JP ;

BESSON, JM .

SOLAR ENERGY MATERIALS, 1980, 2 (02) :159-165

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