PREPARATION OF FERROELECTRIC PBTIO3 THIN-FILM BY REACTIVE SPUTTERING

被引：8

作者：

OKAMURA, T ^{[1
]}

ADACHI, M ^{[1
]}

SHIOSAKI, T ^{[1
]}

KAWABATA, A ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECTR,SAKYO KU,KYOTO 606,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 04期

关键词：

PBTIO3; FERROELECTRIC; THIN FILM; PEROVSKITE; SPUTTERING;

D O I：

10.1143/JJAP.30.727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric PbTiO3 thin films have been successfully obtained. The films were fabricated by reactive sputtering using a simple metal composite as a target. Without postannealing, the films with perovskite structure have been obtained at substrate temperatures of 600-620-degrees-C. The spontaneous polarization (P(s)) and the coercive field (E(c)) of a 0.70-mu-m-thick film were measured as 37-mu-C/cm2 and 86 kV/cm, respectively.

引用

页码：727 / 728

页数：2

共 10 条

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