DEFECTS IN SIMOX STRUCTURES - SOME PROCESS DEPENDENCE

被引：31

作者：

MARGAIL, J

LAMURE, JM

PAPON, AM

机构：

[1] CEA/DTA/LETI, Grenoble Cedex

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 12卷 / 1-2期

关键词：

D O I：

10.1016/0921-5107(92)90254-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The remaining defects in separation by implanted oxygen (SIMOX) structures are shown to be dislocations, stacking faults and buried oxide discontinuities. The defect categories are reviewed and their density in standard material is given. Results of an enhanced chemical etching characterization technique are presented. The dependence of defect density on process parameters is given and the mechanisms of defect formation discussed. An experiment that allows "defect engineering" is also reported.

引用

页码：27 / 36

页数：10

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