ATOMIC AND ELECTRONIC Z-CONTRAST EFFECTS IN HIGH-RESOLUTION IMAGING

被引：19

作者：

BLELOCH, AL

CASTELL, MR

HOWIE, A

WALSH, CA

机构：

[1] Microstructural Physics, Cavendish Laboratory, Cambridge, CB3 0HE, Madingley Road

来源：

ULTRAMICROSCOPY | 1994年 / 54卷 / 2-4期

关键词：

D O I：

10.1016/0304-3991(94)90109-0

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

At relatively large scattering angles, Z-dependent effects occur in both the atomic (elastic or quasi-elastic) electron scattering and in the inelastic electron-electron scattering and can thus exhibit chemical contrast at high spatial resolution. Results are shown for secondary electron imaging of semiconductor multilayers in both bulk specimens and in transmission specimens. Variations in electron-electron scattering or stopping power can contribute to ADF images in the STEM and it may be useful to apply energy filtering as well as energy selection in their collection.

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页码：107 / 115

页数：9

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