MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS

被引：36

作者：

HORIKOSHI, Y

KAWASHIMA, M

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(89)90341-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：17 / 22

页数：6

共 14 条

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[7] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870
[8] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS
HORIKOSHI, Y
KAWASHIMA, M
YAMAGUCHI, H
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