EFFECTS OF AS IMPURITIES ON THE SOLIDIFICATION VELOCITY OF SI DURING PULSED LASER ANNEALING

被引：18

作者：

PEERCY, PS

THOMPSON, MO

TSAO, JY

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.96233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：244 / 246

页数：3

共 10 条

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[2] MODEL FOR SOLUTE REDISTRIBUTION DURING RAPID SOLIDIFICATION [J].

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[3]

Campisano S. U., 1984, Energy Beam-Solid Interactions and Transient Thermal Processing Symposium, P189

[4] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].

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[5]

Galvin G. J., 1984, Energy Beam-Solid Interactions and Transient Thermal Processing Symposium, P111

[6] MEASUREMENT OF THE VELOCITY OF THE CRYSTAL-LIQUID INTERFACE IN PULSED LASER ANNEALING OF SI [J].

GALVIN, GJ ;

THOMPSON, MO ;

MAYER, JW ;

HAMMOND, RB ;

PAULTER, N ;

PEERCY, PS .

PHYSICAL REVIEW LETTERS, 1982, 48 (01) :33-36

[7]

JACKSON KA, 1983, SURFACE MODIFICATION, pCH3

[8]

POATE JM, 1981, LASER ELECTRON BEAM, P121

[9] MELTING TEMPERATURE AND EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON DURING PULSED LASER IRRADIATION [J].

THOMPSON, MO ;

GALVIN, GJ ;

MAYER, JW ;

PEERCY, PS ;

POATE, JM ;

JACOBSON, DC ;

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CHEW, NG .

PHYSICAL REVIEW LETTERS, 1984, 52 (26) :2360-2363

[10]

WHITE CW, 1982, LASER ANNEALING SEMI, P112

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